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半導体拡散炉構成温度制御装置

In the semiconductor industry, a diffusion furnace is a device used to manufacture doping layers on the surface of semiconductor materials. It achieves the doping process through high-temperature heating and controlled diffusion atmosphere. The diffusion furnace uses high-temperature heating to transfer dopants into the semiconductor crystal. Under high temperature conditions, dopant atoms have sufficient energy and activity to diffuse on the crystal surface. Diffusion furnaces usually use the atmosphere method to control the diffusion process. In a diffusion furnace, the transport and diffusion rate of dopants can be controlled by inputting different atmosphere gases.

Gas phase diffusion requires precise control of the concentration, temperature, and time of the diffusion gas to ensure the accuracy and uniformity of doping. Diffusion furnaces are usually equipped with temperature control systems, gas flow control systems, and diffusion control systems to achieve precise control of the diffusion process.

The diffusion furnace equipment usually consists of four main parts: heating chamber, atmosphere control system, temperature control system, and control system. Temperature control system: The temperature control system is used to precisely control the temperature of the heating chamber. Usually, methods such as thermocouples or radiation heaters are used to measure and regulate temperature. Control system: Diffusion furnace equipment is usually equipped with a control system to automatically control various parameters of the diffusion process, such as temperature, time, flow rate, etc. The control system can choose a human-machine interface, making operation more convenient and intuitive.

Diffusion furnaces are widely used in semiconductor processes, including the manufacturing of transistors, diodes, and solar cells. In addition, diffusion furnaces are also applied in fields such as glass industry and ceramic industry.

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